عنوان البحث | ملخص البحث |
Thermal stability and Electrical preoperties of Se90 Ge10-xInx amorphous alloys | |
Effect of H-dilution and hydrogen bonding configuration on optical and electronic properties of a-Si:H/a-Ge:Hmultilayers | |
Fabrication And Characterization Of Amorphous Si/Al/Ag Multilayers For Optoelectronic Devices
| |
Preparation and characterization of conjugated PVA/PANi blend films doped with functionalized graphene for thermoelectric applications
| |
Synthesis and characterization of conjugated PVA/PANi blend doped with functionalized Graphene for Thermoelectric Applications
| |
Preparation and characterization of amorphous multi-layers of Silicon Al and Ag
| |
AC conductivity and dielectric properties of InxTe20−xSe80 chalcogenides: I H Afify et al.
| |
Impact of thermal oxidation parameters on micro-hardness and hot corrosion of Ti-6Al-3Mo-2Nb-2Sn-2Zr-1.5 Cr alloy
| |
Correction: Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
| |
Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
| |
Toward White Light Random Lasing Emission Based on Strained Nano Polygermanium Doped with Tin via Metal-Induced Crystallization (MIC)
| |
Effect of oxide layers formed by thermal oxidation on mechanical properties and NaCl-induced hot corrosion behavior of TC21 Ti-alloy
| |
Influence of α-phase morphology on mechanical characteristics, cycle oxidation, and hot corrosion behavior of Ti-6Al-3Mo-2Nb-2Zr-2Sn-1.5 Cr alloy
| |
Fabrication of nanocrystalline silicon thin films utilized for optoelectronic devices prepared by thermal vacuum evaporation
| |
Study of transition kinetics of Se80Te20−xInx chalcogenide glasses
| |
Raman spectroscopy of unknown mineral sample by solar pumped laser system
| |
Electric and dielectric properties of chalcogenide optic fiber material based selenium
| |
Mechanical properties of chalcogenide optic fiber material based tellurium
| |
Structure and Thermal Stability of a-Si: H/aGe: H Multilayers
| |
Influence of Sb addition on the structural and optical characteristics of thermally vacuum evaporated SbxSe1− x thin films
| |
Effect of annealing and substrate temperature on structural and optoelectronic properties of a-SiGe:H thin films
| |
Influence of Sb addition on the structural and optical characteristics of thermally vacuum evaporated Se85SbxS15-x thin films
| |
Studies on structural, optical and electrical properties of some silicon alloys thin films
| |
Influence of composition on structural, electrical and optical characterizations of Bi48−xSbxSe52 ternary chalcogenide system
| |
Effect of gas type, pressure and temperature on the electrical characteristics of Al-doped SnO2 thin films deposited by RGTO method for gas sensor application
| |
Influence of composition on structural, electrical and optical characterizations of Bi48− x Sb x Se52 ternary chalcogenide system
| |
Thermal stability and electrical properties of Se {sub 90} Ge {sub 10-x} In {sub x} amorphous alloys
| |
Study of nonisothermal crystallization in amorphous Se90In9. 3Cu0. 7 alloy
| |
Effect of α-irradiation of energy 0.5 MeV on the hydrogen bonding in a-Si: H thin films
| |
Hydrogen bonding in hydrogenated amorphous germanium
| |
Composition and electronic properties of a-SiGe: H alloys produced from ultrathin layers of a-Si: H/a-Ge: H
| |
Structural and thermal properties of Se85S15− xSbx glassy system
| |
Influence of Al Layers on the Work Function of SnO2-based gas sensors
| |
MS, Amorphous and Heterogeneous Silicon Thin Films, edited by Schropp R., Branz HM, Hack M., Shimizu I., and Wagner S
| |
Amorphous and Heterogeneous Silicon Thin Films, edited by R. Schropp, HM Branz, M. Hack, I. Shimizu, and S. Wagner
| |
Absorption strengths of Si-H vibrational modes in hydrogenated silicon
| |
The relationship between optical gap and chemical composition in SbxSe1− x system
| |
Amorphous and microcristalline Sillicon Technology
| |
Electrical Resistivity and Structure of Amorphous Ge100-X Sbx Thin Films
| |
Electrical resistivity anti structure of amorphous Ge~ 1~ 0~ 0~-~ x Sb~ x thin films
| |
Long-term stability of hydrogenated amorphous germanium measured by infrared absorption
| |
Internal friction in Se-Sb glasses
| |
Structural Relaxation Investigations by Thermal Expansion Measurements in Se-Sb Glasses
| |
The influence of annealing on the density and mechanical properties of amorphous Se100−xSbx
| |
Physical properties and structural studies of Se100-xSbx
| |
Electrical resistivity, nucleation and crystal growth in amorphous Se100−x-Sbx
| |
MS, 1998. Absorption strength of Si–H vibrational modes in hydrogenated silicon
| |
Crystallization Kinetics and Thermal Stability of Ge100-x Sbx Amorphous Alloys
| |
Effect of annealing and substrate temperature on structural and optoelectronic properties of a-SiGe: H thin films
| |
Electrical and Optical Properties of Ternary System of Bi-Sb-Se
| |
Transition Kinetics and Electrical and Dielectric Properties of Se80te20− Y Sb Y Chalcogenides
| |
Optical properties and optical parameters of chalcogenide optic fiber material based selenium
| |
Structure and temperature profile limits of optic fiber chalcogenide material based selenium
| |